Profile | Dr.Santosh Kumar Vishvakarma

Publications

Dheeraj Sharma and Santosh Kumar Vishvakarma, " Analitical Modeling of 3D potential Discribution of a Rectangular Gate (RecG) Gate-All-around MOSFET in Subthreshold and Strong Inversion Regions " Microelectronics Journal, Elsevier, volume 43, issue 6, pp. 358-363, June 2012.
S. K. Vishvakarma, V.Komal Kumar, A. K. Saxena and S. Dasgupta,"Modeling and Estimation of Edge Direct Tunneling Current for Nanoscale Metal Gate (Hf/AlNx) Symmetric Double Gate MOSFET, Microelectronics Journal, Elsevier, volume 42, issue 5, pp. 688-692, May 2011.
C. B. Kushwah, S.K.Vishvakarma, "Ultra low power Sub-Threshold SRAM Cell Design to Improve Read Static Noise Margin " 16th International Symposium of VLSI Design and Test (VDAT)-2012, July 1st-4th, 2012, Bengal Engineering and Science University, Shibpur, India.
Tor. A. Fjeldly, U. Monga and S. K. Vishvakarma, " Compact Unified modeling of Multogate MOSFETs based on Isomorphic modeling functions" 8th, IEEE, International Caribbean Conference on Devices, Circuits and Systems-2012 (ICCDCS-2012), March 14-17, 2012, Playa del Carmen, Mexico (Invited Paper).
Dheeraj Sharma and S. K. Vishvakarma, “Analytical Modeling of the Subthreshold Potential of Nanoscale GAA Rectangular Gate MOSFET”, International Workshop on Physics of Semiconductor Devices (IWPSD), Dec. 2011, IIT Kanpur, India.