HYBRID NANODEVICE RESEARCH
GROUP
GROUP
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PHOTOVOLTAICS FOR ENERGYWe develop innovative concepts in the field of thin film solar cells using CIGSe, CZTSSe, CTGSe, ZnO, perovskite, etc. based single and multi-junction photovoltaic devices to boost the performance of thin film solar cells, to simplify production processes to reduce the cell thickness for flexible applications using different light-manipulation techniques, and to improve the device structure for the next-generation solar cells with higher efficiency at lower cost for terrestrial as well as for space applications. |
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NON-VOLATILE RESISTIVE RANDOM ACCESS MEMORYThe single synaptic device, with implicit learning and memory functions is the demand of the non-volatile memory in the era of artificial neural networking. The synaptic learning behavior can be achieved using a single synaptic device based on cost-effective metal-insulator-semiconductor (MIS) structure which would promote much cheaper synapse in the artificial neural network. It is found that MIS type structure is more suitable for analog type memories which finds application in neuromorphic computing. Oxide materials such as yttria, ZnO etc. have been studied for ReRAM application and characteristics. Optimization of deposition condition for oxide material has been done to suit the needs of typical ReRAM cell such as data retention and endurance. |
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ZnO BASED HETEROSTRUCTURES FOR HEMT AND MODFETOur group is actively working on the development ZnO-based heterostructures for High Electron Mobility Transistor (HEMT) applications. Here, we have already demonstrated very high two-dimensional electron gas (2DEG) at the heterointerface of MgZnO/ZnO and MgZnO/CdZnO/BeZnO which is very crucial for the realization of HEMT. Our group has also successfully realized Au Schottky contact on MgZnO which is important for Gate formation in ZnO based HEMT. We are actively involved in the physics-based theoretical estimation of 2DEG density at the above-mentioned heterostructures. Currently, we are involved in the fabrication of HEMT-based water and environmental pollution sensors. |
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HIGH PERFORMANCE MgZnO/ZnO BASED UV PHOTODETECTORSWe have been involved in the development of UV photodetectors since its inception. The fabrication of UV photodetectors based on ZnO and its derivative like MgZnO are attractive due to their exciting electronic properties which may significantly impact the performance of high speed electronic and photonic devices. We mainly focus to explore the potential of ZnO and MgZnO for fabrication of thin film UV-photodetectors using dual ion beam sputtering (DIBS) system. |
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FLEXIBLE AND LOW-COST HYBRID BIO-CHEMICAL SENSORGas sensing constitutes a significant proportion of work carried out by the HNRG. The analytes studied within the group ranges from the benign, such as acetone and ethanol, to the much more toxic gases, such as ammonia, hydrogen sulphide, carbon monoxide and carbon dioxide. The sensors are characterized by a high-frequency parameter analyser and a self-assembled gas mixing system. We are able to have a concentration range between 1 ppm and 1000 ppm. Apart from this, we have also been working on flexible sensor as a part of our contribution towards “flexible electronics”. |
© 2010 Hybrid Nanodevice Research Group (HNRG) @ IIT Indore. All rights reserved.